Eniko Gyorgy

- see published papers -

Afiliation and official address

INSTITUTE OF ATOMIC PHYSICS 

NATIONAL INSTITUTE FOR LASERS, PLASMA AND RADIATION PHYSICS

LASERS DEPARTMENT

ATOMISTILOR 111, 76900 BUCHAREST – MAGURELE, ROMANIA

Tel:0040-21-457 44 91, 457 45 50 ext. 1815

Fax: 0040-21-457 42 43, 457 44 67

E-mail: eniko.gyorgy@inflpr.ro 

 

 

Senior Research Scientist 1st degree

2006 to date

  

 Main Fields of Interest

 

-Laser-surface-plasma interactions, surface physics

-3D structures formation on metal or semiconductor surfaces as an effect of multipulse laser irradiation in vacuum, or reactive atmospheres (O2, N2, NH3)

-Pulsed laser deposition (PLD) and reactive pulsed laser deposition (RPLD) of thin films

-Studied materials: Ti, Si, Ta, TiC, Si3N4, SiC, CNx, CWx, biomaterials HA (Ca10(PO4)6(OH)2), TiN, TiO2, AlN, SrFe12O19, TaOx, YBa2Cu3O7-x

-Laser direct synthesis of compound layers on metallic surfaces irradiated in controlled reactive atmospheres

-Surface characterisation techniques: electron spectroscopy (XPS, AES), Raman spectroscopy, spectrophotometry, electron microscopy, X ray diffraction (XRD), nuclear techniques (RBS, ERDA), secondary ion mass spectrometry (SIMS)

 

Education                                                           

B.Sc in Physics

Faculty of Physics, University of Bucharest, 

Romania

1989-1994

Master in Physics

Faculty of Physics, University of Bucharest, 

Romania

1994-1995

 

                        Doctorate                                                                                                                   

Ph.D in Physics

Institute of Atomic Physics, Bucharest, Romania

1995-1998

 

Professional Activity

 

Institution

 

Research Assistant

Institute of Atomic Physics, Bucharest, Romania

1994-1995

Scientific Researcher

Institute of Atomic Physics, Bucharest, Romania

1996 - present

Lecturer

Faculty of Physics, University of Bucharest, 

Romania

Lectures and seminars for the 5th year students on “Laser-Material Interactions”

1999 - present

 

 Languages (R = Regular, G = Good, C = Correct) 

 

Speak

Read

Write

Hungarian

C

C

C

Romanian

C

C

C

English

C

C

C

German

R

C

C

Italian

R

G

G

Spanish

G

C

C

 

Research Stages

 


 

1.

University of Lecce, Italy, Physics Department

02.03.1996-15.03.1996

2.

International Center for Theoretical Physics (ICTP), Workshop “Synthesis and Characterisation of Thin Films”

16.03.1996-15.04.1996

3.

“Johannes Kepler” University Linz, Austria, Physics Department

23.04.1997-24.06.1997

4.

Foundation for Reserach and Technology of Hellas, Institute of Electronic Structures and Lasers FORTH-IESL, Heraklion, Greece

03.05.1998-03.06.1998

5.

University of Lecce, Italy, Physics Department

20.08.1998-06.12.1998

6.

University of Milano, Italy, Physics Department

07.12.1998-22.12.1998

7.

Foundation for Reserach and Technology of Hellas, Institute of Electronic Structures and Lasers FORTH-IESL, Heraklion, Greece

02.06.1999-01.07.1999

8.

The National Hellenic Research Foundation, Institute of Theoretical Physics and Chemistry, Athens

02.07.1999-16.07.1999

9.

Institute of Electronics, Sofia

21.10.1999-31.10.1999

10.

Institute of Physics, Prague

01.11.1999-08.11.1999

11.

”Jozsef Attila University, Szeged, Hungary

09.11.1999-23.11.1999

12.

University of Barcelona, Department of Applied Physics and Optics

04.03.2000-08.09.2003

13.

Institute of Materials Science of Barcelona, CSIS, Spain

15.06.2004-09.09.2004

14.

The National Hellenic Research Foundation, Institute of Theoretical Physics and Chemistry, Athens

10.09.2004-18.09.2004

15.

Institute of Materials Science of Barcelona, CSIS, Spain

15.01.2005-22.03.2005

 Scientific Activity 

i. Parametric study of TiN thin films obtained by reactive laser ablation of titanium targets in nitrogen atmosphere: the role of the ambient gas pressure and of the oxyge contamination.

ii. Study of the crater formed on the surface of Ti targets under laser irradiation in nitrogen atmosphere.

iii. Synthesis and deposition of thin films of titanium carbide by reactive laser ablation of titanium targets in methane atmosphere: study of the chemical composition. 

iv. Deposition of silicon carbide thin films by reactive laser ablation of silicon targets in methane atmosphere.

v.  Morphology of tungsten carbide thin films obtained by laser ablation of tungsten targets in methane atmosphere.

vi  Crystalline structure of tungsten carbide thin films.

vi.  Synthesis and deposition of silicon nitride thin films by reactive laser ablation of silicon: parametric study.

viii. Characterisation of carbon nitride thin films deposited by laser ablation of graphite targets in nitrogen atmosphere: morphology, chemical composition, crystalline state, optical and mechanical properties.

ix. Study of optical properties of carbon nitride thin films deposited by reactive laser ablation of graphite targets in NH3 at low pressure.

x.   Elucidation of participation in chemical synthesis of the three main stages of the pulsed laser deposition process:  

-substance expulsion from the target surface under the action of high intensity laser radiation

       -transit through gas of the expulsed substance

       -final impact of ablated substance onto the collector surface

xi. Elimination of particulates of different types and dimensions covering the surface of thin films deposited by reactive laser ablation, through IR laser irradiation of the plasma generated by the UV laser.

xii. Description of thermo-physical regimes on the target taking place as an effect of high intensity laser irradiation leading to the expulsion of substance in form of vapour and/or liquid.

xiii.  Deposition and characterisation of AlN thin films obtained by fs- and ns-PLD: comparative study.

xiv. Direct laser synthesis of nitrides and oxides on the surface of Ti targets irradiated by a high repetition rate Nd:YAG laser, in chemically active atmosphere.

xv. Laser micro-processing of metallic surfaces in vacuum, Ar, or chemically active atmosphere.

xvi.Growth of undoped and noble metal doped semiconductor transition metal oxide thin films by laser ablation from metallic or oxide targets in oxygen atmosphere. Characterisation of surface morphology, chemical composition, crystalline state, optical and electrical properties.