The case of semi Direct case in complex oxide multilayer heterostructures



Crystalline oxides exhibit a plethora of interesting phenomena, providing the basis for novel concepts of oxide-based electronic devices. The interest in these materials is further increasing due to new possibilities which have arisen as a result of the remarkable effects that became available by creating artificial heterostructures, i. e. by combining thin films of different crystalline oxides. The number of potential heterostructures that can be made is essentially limitless, so is imperative experimentalist to look to theoretical predictions for guidance.
A study [V. Pardo et. al, Phys. Rev. Lett. 102, 166803 (2009)] has investigated the electronic behaviour of multilayer nanostructures, addressing specifically the evolution of transport and magnetic. The properties are found to depend strongly on layer thickness and at small thicknesses the effect of quantum confinement give rise to a new electronic state for certain multilayers.
A similar behaviour of electrons (Dirac-like) has been observed in one-layer thick graphene. A big advantage the oxide heterostructure has over graphene is rigidity, which could make patterning of such multilayers easier. With its unique properties, this material could open up a new world of possibilities in the emerging field of spintronics technology



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