• The research carried out within the project is in the field of multilayer nanostructures, which is considered to be of great interest. In all nanostructures the main idea is the confinement of charge carriers at the interface of the two insulators, and thus any newly observed phenomenon is considered to be an interface effect. In the case of the proposed (TiO2)n/(VO2)m multilayer nanostructures, charge carrier confinement is also predicted, although the charge carriers are not concentrated at the interface of the two materials. Consequently, any predicted phenomenon cannot be attributed to the interface. This approach can be an alternative to realize functional HTS multilayers in which new phenomena occur that do not come from the interfaces of the layers.
  • Heterostructures based on TiO2 of VO2 were obtained, for which the effect of the growth temperature on the structural and transition characteristics from semiconductor to metal was studied. Thus, for a growth temperature of 280 °C, the obtained epilayer shows a transition temperature of only 291 K. By further increasing the deposition temperature, it was observed that the transition temperature increases together with a strain developed parallel to the film- substrate and with a contraction along the V4+-V4+ bond direction in the metal phase. For deposition temperatures above 400°C, the amount of Ti ions diffusing from the TiO2 substrate into the VO2 layers gradually increased, leading to the formation of pure VxTi1-xO2 solid solutions at temperatures above 550°C.
  • The obtained results contribute to a better knowledge and understanding of the physical phenomena of the solid body, which occur at the interfaces of the layers of the multilayer structure composed of metal oxides (TiO2)n/(VO2)m. All these materials are possible candidates for applications in the field spin-electronics or spintronics



409 Atomistilor street, PO BOX MG-36, Magurele, ILFOV


Mobirise simple website maker